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Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon.

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Title: Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon.
Authors: Coleman, P. G., Burrows, C. P., Knights, A. P.
Source: Applied Physics Letters; February 11 2002, Vol. 80 Issue 6, p947-949, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500831937
AccessLevel: 2
PubType: Academic Journal
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  Data: Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500831937
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        Value: 10.1063/1.1448856
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      – Code: eng
        Text: English
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        StartPage: 947
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      – TitleFull: Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon.
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            NameFull: Coleman, P. G.
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              Text: February 11 2002
              Type: published
              Y: 2002
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