Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon.
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| Title: | Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon. |
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| Authors: | Mikhelashvili, V., Eisenstein, G., Edelmann, F. |
| Source: | Journal of Applied Physics; November 15 2001, Vol. 90 Issue 10, p5447-5449, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.1413239 |
