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Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon.

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Bibliographic Details
Title: Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon.
Authors: Mikhelashvili, V., Eisenstein, G., Edelmann, F.
Source: Journal of Applied Physics; November 15 2001, Vol. 90 Issue 10, p5447-5449, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500833682
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon.
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  Data: <searchLink fieldCode="AU" term="%22Mikhelashvili%2C+V%2E%22">Mikhelashvili, V.</searchLink><br /><searchLink fieldCode="AU" term="%22Eisenstein%2C+G%2E%22">Eisenstein, G.</searchLink><br /><searchLink fieldCode="AU" term="%22Edelmann%2C+F%2E%22">Edelmann, F.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; November 15 2001, Vol. 90 Issue 10, p5447-5449, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500833682
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.1413239
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 5447
    Titles:
      – TitleFull: Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon.
        Type: main
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            NameFull: Mikhelashvili, V.
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            NameFull: Eisenstein, G.
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            NameFull: Edelmann, F.
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            – D: 15
              M: 11
              Text: November 15 2001
              Type: published
              Y: 2001
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              Value: 90
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              Value: 10
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