Growth and Doping of SiC-Thin Films on Low-Stress, Amorphous Si3N4/Si Substrates for Robust Microelectromechanical Systems Applications.

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Title: Growth and Doping of SiC-Thin Films on Low-Stress, Amorphous Si3N4/Si Substrates for Robust Microelectromechanical Systems Applications.
Authors: Cheng, L., Pan, M., Scofield, J.
Source: Journal of Electronic Materials; May 2002, Vol. 31 Issue 5, p361-365, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500864992
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Growth and Doping of SiC-Thin Films on Low-Stress, Amorphous Si3N4/Si Substrates for Robust Microelectromechanical Systems Applications.
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  Data: <searchLink fieldCode="AU" term="%22Cheng%2C+L%2E%22">Cheng, L.</searchLink><br /><searchLink fieldCode="AU" term="%22Pan%2C+M%2E%22">Pan, M.</searchLink><br /><searchLink fieldCode="AU" term="%22Scofield%2C+J%2E%22">Scofield, J.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; May 2002, Vol. 31 Issue 5, p361-365, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500864992
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      – Type: doi
        Value: 10.1007/s11664-002-0083-x
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 361
    Titles:
      – TitleFull: Growth and Doping of SiC-Thin Films on Low-Stress, Amorphous Si3N4/Si Substrates for Robust Microelectromechanical Systems Applications.
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            NameFull: Cheng, L.
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            NameFull: Pan, M.
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            NameFull: Scofield, J.
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            – D: 01
              M: 05
              Text: May 2002
              Type: published
              Y: 2002
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              Value: 31
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              Value: 5
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