Interfacial Anodic Behaviors of n- and p-GaAs Semiconductors in Liquid Ammonia at 223 K.
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| Title: | Interfacial Anodic Behaviors of n- and p-GaAs Semiconductors in Liquid Ammonia at 223 K. |
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| Authors: | Seitz, O., Mathieu, C., Gonçalves, A.-M. |
| Source: | Journal of the Electrochemical Society; October 2003, Vol. 150 Issue 10, pE461-E467, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00134651 |
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| DOI: | 10.1149/1.1603249 |
