APA (7th ed.) Citation

Seitz, O., Mathieu, C., & Gonçalves, A. (2003). Interfacial Anodic Behaviors of n- and p-GaAs Semiconductors in Liquid Ammonia at 223 K. Journal of the Electrochemical Society, 150(10), E461. https://doi.org/10.1149/1.1603249

Chicago Style (17th ed.) Citation

Seitz, O., C. Mathieu, and A.-M Gonçalves. "Interfacial Anodic Behaviors of N- and P-GaAs Semiconductors in Liquid Ammonia at 223 K." Journal of the Electrochemical Society 150, no. 10 (2003): E461. https://doi.org/10.1149/1.1603249.

MLA (9th ed.) Citation

Seitz, O., et al. "Interfacial Anodic Behaviors of N- and P-GaAs Semiconductors in Liquid Ammonia at 223 K." Journal of the Electrochemical Society, vol. 150, no. 10, 2003, p. E461, https://doi.org/10.1149/1.1603249.