View in EDS

Interfacial Anodic Behaviors of n- and p-GaAs Semiconductors in Liquid Ammonia at 223 K.

Saved in:
Bibliographic Details
Title: Interfacial Anodic Behaviors of n- and p-GaAs Semiconductors in Liquid Ammonia at 223 K.
Authors: Seitz, O., Mathieu, C., Gonçalves, A.-M.
Source: Journal of the Electrochemical Society; October 2003, Vol. 150 Issue 10, pE461-E467, 7p
Database: Applied Science & Technology Source
Be the first to leave a comment!
You must be logged in first