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A review of leakage current in SOI CMOS ICs: impact on parametric testing techniques.

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Title: A review of leakage current in SOI CMOS ICs: impact on parametric testing techniques.
Authors: Iñiguez, Benjamin, Raskin, Jean-Pierre, Simon, Pascal
Source: Solid-State Electronics; November 2003, Vol. 47 Issue 11, p1959-1967, 9p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500908693
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: A review of leakage current in SOI CMOS ICs: impact on parametric testing techniques.
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  Data: <searchLink fieldCode="AU" term="%22Iñiguez%2C+Benjamin%22">Iñiguez, Benjamin</searchLink><br /><searchLink fieldCode="AU" term="%22Raskin%2C+Jean-Pierre%22">Raskin, Jean-Pierre</searchLink><br /><searchLink fieldCode="AU" term="%22Simon%2C+Pascal%22">Simon, Pascal</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; November 2003, Vol. 47 Issue 11, p1959-1967, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500908693
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/S0038-1101(03)00249-1
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 1959
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      – TitleFull: A review of leakage current in SOI CMOS ICs: impact on parametric testing techniques.
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            NameFull: Iñiguez, Benjamin
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            NameFull: Raskin, Jean-Pierre
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            NameFull: Simon, Pascal
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            – D: 01
              M: 11
              Text: November 2003
              Type: published
              Y: 2003
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              Value: 47
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