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Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope.

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Bibliographic Details
Title: Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope.
Authors: Albrecht, M., Strunk, H. P., Weyher, J. L.
Source: Journal of Applied Physics; August 15 2002, Vol. 92 Issue 4, p2000-2005, 6p
Database: Applied Science & Technology Source
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