Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator.

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Bibliographic Details
Title: Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator.
Authors: Wang, Guangming, Moses, Daniel, Heeger, Alan J.
Source: Journal of Applied Physics; January 1 2004, Vol. 95 Issue 1, p316-322, 7p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.1630693