Inductively coupled plasma etching of SiC in SF6/O2 and etch-induced surface chemical bonding modifications.

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Bibliographic Details
Title: Inductively coupled plasma etching of SiC in SF6/O2 and etch-induced surface chemical bonding modifications.
Authors: Jiang, Liudi, Cheung, R., Brown, R.
Source: Journal of Applied Physics; February 1 2003, Vol. 93 Issue 3, p1376-1383, 8p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.1534908