Comment on “Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers” {Appl. Phys. Lett. 83, 951 (2003)}.
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| Title: | Comment on “Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers” {Appl. Phys. Lett. 83, 951 (2003)}. |
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| Authors: | Jansen, R., van't Erve, O. M. J., Postma, F. M. |
| Source: | Applied Physics Letters; 5/24/2004, Vol. 84 Issue 21, p4337-4340, 4p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.1739521 |
