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Comment on “Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers” {Appl. Phys. Lett. 83, 951 (2003)}.

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Title: Comment on “Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers” {Appl. Phys. Lett. 83, 951 (2003)}.
Authors: Jansen, R., van't Erve, O. M. J., Postma, F. M.
Source: Applied Physics Letters; 5/24/2004, Vol. 84 Issue 21, p4337-4340, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500991993
AccessLevel: 2
PubType: Academic Journal
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  Data: Comment on “Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers” {Appl. Phys. Lett. 83, 951 (2003)}.
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  Data: <searchLink fieldCode="AU" term="%22Jansen%2C+R%2E%22">Jansen, R.</searchLink><br /><searchLink fieldCode="AU" term="%22van't+Erve%2C+O%2E+M%2E+J%2E%22">van't Erve, O. M. J.</searchLink><br /><searchLink fieldCode="AU" term="%22Postma%2C+F%2E+M%2E%22">Postma, F. M.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 5/24/2004, Vol. 84 Issue 21, p4337-4340, 4p
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        Value: 10.1063/1.1739521
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      – TitleFull: Comment on “Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers” {Appl. Phys. Lett. 83, 951 (2003)}.
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              Text: 5/24/2004
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