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Molecular-beam epitaxy of Ge on GaAs(001) and Si capping.

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Bibliographic Details
Title:	Molecular-beam epitaxy of Ge on GaAs(001) and Si capping.
Authors:	Goldfarb, I., Azar, J. L., Grisaru, A.
Source:	Journal of Applied Physics; March 1 2003, Vol. 93 Issue 5, p3057-3062, 6p
Database:	Applied Science & Technology Source

Description
ISSN:	00218979
DOI:	10.1063/1.1542656