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Molecular-beam epitaxy of Ge on GaAs(001) and Si capping.

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Bibliographic Details
Title: Molecular-beam epitaxy of Ge on GaAs(001) and Si capping.
Authors: Goldfarb, I., Azar, J. L., Grisaru, A.
Source: Journal of Applied Physics; March 1 2003, Vol. 93 Issue 5, p3057-3062, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
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AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Molecular-beam epitaxy of Ge on GaAs(001) and Si capping.
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  Data: <searchLink fieldCode="AU" term="%22Goldfarb%2C+I%2E%22">Goldfarb, I.</searchLink><br /><searchLink fieldCode="AU" term="%22Azar%2C+J%2E+L%2E%22">Azar, J. L.</searchLink><br /><searchLink fieldCode="AU" term="%22Grisaru%2C+A%2E%22">Grisaru, A.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; March 1 2003, Vol. 93 Issue 5, p3057-3062, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501002902
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.1542656
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 3057
    Titles:
      – TitleFull: Molecular-beam epitaxy of Ge on GaAs(001) and Si capping.
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            NameFull: Goldfarb, I.
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            NameFull: Azar, J. L.
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            NameFull: Grisaru, A.
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              M: 03
              Text: March 1 2003
              Type: published
              Y: 2003
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              Value: 93
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              Value: 5
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