APA (7th ed.) Citation

Gao, D., Howe, R. T., & Maboudian, R. (2003). High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma. Applied Physics Letters, 82(11), 1742. https://doi.org/10.1063/1.1560561

Chicago Style (17th ed.) Citation

Gao, Di, Roger T. Howe, and Roya Maboudian. "High-selectivity Etching of Polycrystalline 3C-SiC Films Using HBr-based Transformer Coupled Plasma." Applied Physics Letters 82, no. 11 (2003): 1742. https://doi.org/10.1063/1.1560561.

MLA (9th ed.) Citation

Gao, Di, et al. "High-selectivity Etching of Polycrystalline 3C-SiC Films Using HBr-based Transformer Coupled Plasma." Applied Physics Letters, vol. 82, no. 11, 2003, p. 1742, https://doi.org/10.1063/1.1560561.