Influence of Si3N4 Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors.

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Bibliographic Details
Title:	Influence of Si3N4 Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors.
Authors:	Cha, Ho-Young, Choi, Y. C., Thompson, R. M.
Source:	Journal of Electronic Materials; Aug2004, Vol. 33 Issue 8, p908-911, 4p
Database:	Applied Science & Technology Source

Description
ISSN:	03615235
DOI:	10.1007/s11664-004-0219-2