APA (7th ed.) Citation

Cha, H., Choi, Y. C., & Thompson, R. M. (2004). Influence of Si3N4 Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors. Journal of Electronic Materials, 33(8), 908. https://doi.org/10.1007/s11664-004-0219-2

Chicago Style (17th ed.) Citation

Cha, Ho-Young, Y. C. Choi, and R. M. Thompson. "Influence of Si3N4 Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors." Journal of Electronic Materials 33, no. 8 (2004): 908. https://doi.org/10.1007/s11664-004-0219-2.

MLA (9th ed.) Citation

Cha, Ho-Young, et al. "Influence of Si3N4 Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors." Journal of Electronic Materials, vol. 33, no. 8, 2004, p. 908, https://doi.org/10.1007/s11664-004-0219-2.