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Influence of Si3N4 Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors.

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Title: Influence of Si3N4 Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors.
Authors: Cha, Ho-Young, Choi, Y. C., Thompson, R. M.
Source: Journal of Electronic Materials; Aug2004, Vol. 33 Issue 8, p908-911, 4p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 501018064
AccessLevel: 2
PubType: Academic Journal
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  Data: Influence of Si3N4 Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; Aug2004, Vol. 33 Issue 8, p908-911, 4p
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        Value: 10.1007/s11664-004-0219-2
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      – Code: eng
        Text: English
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        PageCount: 4
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      – TitleFull: Influence of Si3N4 Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors.
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            NameFull: Cha, Ho-Young
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            NameFull: Choi, Y. C.
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            NameFull: Thompson, R. M.
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              Text: Aug2004
              Type: published
              Y: 2004
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