Influence of Si3N4 Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors.
Saved in:
| Title: | Influence of Si3N4 Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors. |
|---|---|
| Authors: | Cha, Ho-Young, Choi, Y. C., Thompson, R. M. |
| Source: | Journal of Electronic Materials; Aug2004, Vol. 33 Issue 8, p908-911, 4p |
| Database: | Applied Science & Technology Source |
Be the first to leave a comment!