Influence of Si3N4 Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors.

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Bibliographic Details
Title: Influence of Si3N4 Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors.
Authors: Cha, Ho-Young, Choi, Y. C., Thompson, R. M.
Source: Journal of Electronic Materials; Aug2004, Vol. 33 Issue 8, p908-911, 4p
Database: Applied Science & Technology Source
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