Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures.

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Bibliographic Details
Title: Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures.
Authors: Park, M., Cuomo, J. J., Rodriguez, B. J.
Source: Journal of Applied Physics; June 15 2003, Vol. 93 Issue 12, p9542-9547, 6p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.1570507