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Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures.

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Bibliographic Details
Title: Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures.
Authors: Park, M., Cuomo, J. J., Rodriguez, B. J.
Source: Journal of Applied Physics; June 15 2003, Vol. 93 Issue 12, p9542-9547, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501051366
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; June 15 2003, Vol. 93 Issue 12, p9542-9547, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501051366
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.1570507
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 9542
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      – TitleFull: Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures.
        Type: main
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            NameFull: Park, M.
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            NameFull: Cuomo, J. J.
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            NameFull: Rodriguez, B. J.
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            – D: 15
              M: 06
              Text: June 15 2003
              Type: published
              Y: 2003
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              Value: 93
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              Value: 12
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            – TitleFull: Journal of Applied Physics
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