The Effects of Oxygen, Nitrogen, and Hydrogen Annealing on Mg Acceptors in GaN as Monitored by Electron Paramagnetic Resonance Spectroscopy.
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| Title: | The Effects of Oxygen, Nitrogen, and Hydrogen Annealing on Mg Acceptors in GaN as Monitored by Electron Paramagnetic Resonance Spectroscopy. |
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| Authors: | Matlock, D. M., Zvanut, M. E., Wang, Haiyan |
| Source: | Journal of Electronic Materials; January 2005, Vol. 34 Issue 1, p34-39, 6p |
| Database: | Applied Science & Technology Source |
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