View in EDS PDF Full Text

The Effects of Oxygen, Nitrogen, and Hydrogen Annealing on Mg Acceptors in GaN as Monitored by Electron Paramagnetic Resonance Spectroscopy.

Saved in:
Bibliographic Details
Title: The Effects of Oxygen, Nitrogen, and Hydrogen Annealing on Mg Acceptors in GaN as Monitored by Electron Paramagnetic Resonance Spectroscopy.
Authors: Matlock, D. M., Zvanut, M. E., Wang, Haiyan
Source: Journal of Electronic Materials; January 2005, Vol. 34 Issue 1, p34-39, 6p
Database: Applied Science & Technology Source
Description
ISSN:03615235
DOI:10.1007/s11664-005-0177-3