Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches.

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Bibliographic Details
Title: Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches.
Authors: Hsin, Y. M., Tang, W. B., Hsu, H. T.
Source: Solid-State Electronics; March 2005, Vol. 49 Issue 3, p295-300, 6p
Database: Applied Science & Technology Source
Description
ISSN:00381101
DOI:10.1016/j.sse.2004.10.006