APA (7th ed.) Citation

Zhang, J., Howe, R. T., & Maboudian, R. (2006). Electrical Characterization of n-Type Polycrystalline 3C-Silicon Carbide Thin Films Deposited by 1,3-Disilabutane. Journal of the Electrochemical Society, 153(6), G548. https://doi.org/10.1149/1.2188327

Chicago Style (17th ed.) Citation

Zhang, Jingchun, Roger T. Howe, and Roya Maboudian. "Electrical Characterization of N-Type Polycrystalline 3C-Silicon Carbide Thin Films Deposited by 1,3-Disilabutane." Journal of the Electrochemical Society 153, no. 6 (2006): G548. https://doi.org/10.1149/1.2188327.

MLA (9th ed.) Citation

Zhang, Jingchun, et al. "Electrical Characterization of N-Type Polycrystalline 3C-Silicon Carbide Thin Films Deposited by 1,3-Disilabutane." Journal of the Electrochemical Society, vol. 153, no. 6, 2006, p. G548, https://doi.org/10.1149/1.2188327.