Lévêque, P., Mathiot, D., & Christensen, J. S. (2006). Effect of a mid-temperature thermal annealing on the enhancement of boron diffusion during rapid thermal annealing. Journal of Applied Physics, 99(7), 073506. https://doi.org/10.1063/1.2183583
Chicago Style (17th ed.) CitationLévêque, P., D. Mathiot, and J. S. Christensen. "Effect of a Mid-temperature Thermal Annealing on the Enhancement of Boron Diffusion During Rapid Thermal Annealing." Journal of Applied Physics 99, no. 7 (2006): 073506. https://doi.org/10.1063/1.2183583.
MLA (9th ed.) CitationLévêque, P., et al. "Effect of a Mid-temperature Thermal Annealing on the Enhancement of Boron Diffusion During Rapid Thermal Annealing." Journal of Applied Physics, vol. 99, no. 7, 2006, p. 073506, https://doi.org/10.1063/1.2183583.