Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy.
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| Title: | Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy. |
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| Authors: | Barabash, R. I., Roder, C., Ice, G. E. |
| Source: | Journal of Applied Physics; September 1 2006, Vol. 100 Issue 5, p053103-053103, 1p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.2234807 |
