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Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy.

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Title: Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy.
Authors: Barabash, R. I., Roder, C., Ice, G. E.
Source: Journal of Applied Physics; September 1 2006, Vol. 100 Issue 5, p053103-053103, 1p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501307818
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy.
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  Data: <searchLink fieldCode="AU" term="%22Barabash%2C+R%2E+I%2E%22">Barabash, R. I.</searchLink><br /><searchLink fieldCode="AU" term="%22Roder%2C+C%2E%22">Roder, C.</searchLink><br /><searchLink fieldCode="AU" term="%22Ice%2C+G%2E+E%2E%22">Ice, G. E.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; September 1 2006, Vol. 100 Issue 5, p053103-053103, 1p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501307818
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.2234807
    Languages:
      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: 053103
    Titles:
      – TitleFull: Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy.
        Type: main
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            NameFull: Barabash, R. I.
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            NameFull: Roder, C.
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            NameFull: Ice, G. E.
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            – D: 01
              M: 09
              Text: September 1 2006
              Type: published
              Y: 2006
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              Value: 100
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              Value: 5
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            – TitleFull: Journal of Applied Physics
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