The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors.
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| Title: | The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors. |
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| Authors: | Barbalat, Benoît, Schwartzmann, Thierry, Chevalier, Pascal |
| Source: | Semiconductor Science & Technology; January 2007, Vol. 22 Issue 1, pS99-S102, 4p |
| Database: | Applied Science & Technology Source |
| ISSN: | 02681242 |
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| DOI: | 10.1088/0268-1242/22/1/S23 |
