APA (7th ed.) Citation

Barbalat, B., Schwartzmann, T., & Chevalier, P. (2007). The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors. Semiconductor Science & Technology, 22(1), S99. https://doi.org/10.1088/0268-1242/22/1/S23

Chicago Style (17th ed.) Citation

Barbalat, Benoît, Thierry Schwartzmann, and Pascal Chevalier. "The Effect of Carbon on Neutral Base Recombination in High-speed SiGeC Heterojunction Bipolar Transistors." Semiconductor Science & Technology 22, no. 1 (2007): S99. https://doi.org/10.1088/0268-1242/22/1/S23.

MLA (9th ed.) Citation

Barbalat, Benoît, et al. "The Effect of Carbon on Neutral Base Recombination in High-speed SiGeC Heterojunction Bipolar Transistors." Semiconductor Science & Technology, vol. 22, no. 1, 2007, p. S99, https://doi.org/10.1088/0268-1242/22/1/S23.