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The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors.

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Bibliographic Details
Title: The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors.
Authors: Barbalat, Benoît, Schwartzmann, Thierry, Chevalier, Pascal
Source: Semiconductor Science & Technology; January 2007, Vol. 22 Issue 1, pS99-S102, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501360165
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors.
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  Data: <searchLink fieldCode="AU" term="%22Barbalat%2C+Benoît%22">Barbalat, Benoît</searchLink><br /><searchLink fieldCode="AU" term="%22Schwartzmann%2C+Thierry%22">Schwartzmann, Thierry</searchLink><br /><searchLink fieldCode="AU" term="%22Chevalier%2C+Pascal%22">Chevalier, Pascal</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; January 2007, Vol. 22 Issue 1, pS99-S102, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501360165
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1088/0268-1242/22/1/S23
    Languages:
      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: S99
    Titles:
      – TitleFull: The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors.
        Type: main
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            NameFull: Barbalat, Benoît
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            NameFull: Schwartzmann, Thierry
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            NameFull: Chevalier, Pascal
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            – D: 01
              M: 01
              Text: January 2007
              Type: published
              Y: 2007
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              Value: 22
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            – TitleFull: Semiconductor Science & Technology
              Type: main
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