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The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors.

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Bibliographic Details
Title: The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors.
Authors: Barbalat, Benoît, Schwartzmann, Thierry, Chevalier, Pascal
Source: Semiconductor Science & Technology; January 2007, Vol. 22 Issue 1, pS99-S102, 4p
Database: Applied Science & Technology Source
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