Scalability and Reliability Characteristics of CVD HfO2 Gate Dielectrics with HfN Electrodes for Advanced CMOS Applications.

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Bibliographic Details
Title: Scalability and Reliability Characteristics of CVD HfO2 Gate Dielectrics with HfN Electrodes for Advanced CMOS Applications.
Authors: Kang, J. F., Yu, H. Y., Ren, C.
Source: Journal of the Electrochemical Society; Nov2007, Vol. 154 Issue 11, pH927-H932, 6p
Database: Applied Science & Technology Source
Description
ISSN:00134651
DOI:10.1149/1.2775163