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Scalability and Reliability Characteristics of CVD HfO2 Gate Dielectrics with HfN Electrodes for Advanced CMOS Applications.

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Bibliographic Details
Title: Scalability and Reliability Characteristics of CVD HfO2 Gate Dielectrics with HfN Electrodes for Advanced CMOS Applications.
Authors: Kang, J. F., Yu, H. Y., Ren, C.
Source: Journal of the Electrochemical Society; Nov2007, Vol. 154 Issue 11, pH927-H932, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501374671
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Scalability and Reliability Characteristics of CVD HfO2 Gate Dielectrics with HfN Electrodes for Advanced CMOS Applications.
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  Data: <searchLink fieldCode="AU" term="%22Kang%2C+J%2E+F%2E%22">Kang, J. F.</searchLink><br /><searchLink fieldCode="AU" term="%22Yu%2C+H%2E+Y%2E%22">Yu, H. Y.</searchLink><br /><searchLink fieldCode="AU" term="%22Ren%2C+C%2E%22">Ren, C.</searchLink>
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      – Type: doi
        Value: 10.1149/1.2775163
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: H927
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      – TitleFull: Scalability and Reliability Characteristics of CVD HfO2 Gate Dielectrics with HfN Electrodes for Advanced CMOS Applications.
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            NameFull: Kang, J. F.
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            NameFull: Yu, H. Y.
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            NameFull: Ren, C.
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            – D: 01
              M: 11
              Text: Nov2007
              Type: published
              Y: 2007
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