Modeling of Inversion Layer Centroid and Polysilicon Depletion Effects on Ultrathin-Gate-Oxide MOSFET Behavior: The Influence of Crystallographic Orientation.
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| Title: | Modeling of Inversion Layer Centroid and Polysilicon Depletion Effects on Ultrathin-Gate-Oxide MOSFET Behavior: The Influence of Crystallographic Orientation. |
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| Authors: | Rodriguez, Noel, Gámiz, Francisco, Roldán, Juan B. |
| Source: | IEEE Transactions on Electron Devices; April 2007, Vol. 54 Issue 4, p723-732, 10p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00189383 |
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| DOI: | 10.1109/TED.2007.891854 |
