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Modeling of Inversion Layer Centroid and Polysilicon Depletion Effects on Ultrathin-Gate-Oxide MOSFET Behavior: The Influence of Crystallographic Orientation.

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Bibliographic Details
Title: Modeling of Inversion Layer Centroid and Polysilicon Depletion Effects on Ultrathin-Gate-Oxide MOSFET Behavior: The Influence of Crystallographic Orientation.
Authors: Rodriguez, Noel, Gámiz, Francisco, Roldán, Juan B.
Source: IEEE Transactions on Electron Devices; April 2007, Vol. 54 Issue 4, p723-732, 10p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501409063
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Modeling of Inversion Layer Centroid and Polysilicon Depletion Effects on Ultrathin-Gate-Oxide MOSFET Behavior: The Influence of Crystallographic Orientation.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Rodriguez%2C+Noel%22">Rodriguez, Noel</searchLink><br /><searchLink fieldCode="AU" term="%22Gámiz%2C+Francisco%22">Gámiz, Francisco</searchLink><br /><searchLink fieldCode="AU" term="%22Roldán%2C+Juan+B%2E%22">Roldán, Juan B.</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>; April 2007, Vol. 54 Issue 4, p723-732, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501409063
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/TED.2007.891854
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 723
    Titles:
      – TitleFull: Modeling of Inversion Layer Centroid and Polysilicon Depletion Effects on Ultrathin-Gate-Oxide MOSFET Behavior: The Influence of Crystallographic Orientation.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Rodriguez, Noel
      – PersonEntity:
          Name:
            NameFull: Gámiz, Francisco
      – PersonEntity:
          Name:
            NameFull: Roldán, Juan B.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 04
              Text: April 2007
              Type: published
              Y: 2007
          Identifiers:
            – Type: issn-print
              Value: 00189383
          Numbering:
            – Type: volume
              Value: 54
            – Type: issue
              Value: 4
          Titles:
            – TitleFull: IEEE Transactions on Electron Devices
              Type: main
ResultId 1