The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient.
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| Title: | The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient. |
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| Authors: | Abdulmalik, D. A., Coleman, P. G., Su, H. Z. |
| Source: | Journal of Materials Science: Materials in Electronics; July 2007, Vol. 18 Issue 7, p753-757, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 09574522 |
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| DOI: | 10.1007/s10854-006-9084-5 |
