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The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient.

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Title: The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient.
Authors: Abdulmalik, D. A., Coleman, P. G., Su, H. Z.
Source: Journal of Materials Science: Materials in Electronics; July 2007, Vol. 18 Issue 7, p753-757, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501452179
AccessLevel: 2
PubType: Academic Journal
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  Data: The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; July 2007, Vol. 18 Issue 7, p753-757, 5p
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        Value: 10.1007/s10854-006-9084-5
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 753
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      – TitleFull: The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient.
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            NameFull: Abdulmalik, D. A.
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            NameFull: Coleman, P. G.
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              Text: July 2007
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              Y: 2007
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