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Very Low Pressure Magnetron Reactive Ion Etching of GaN and AlxGa1-xN Using Dichlorofluoromethane (Halocarbon 12)

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Bibliographic Details
Title: Very Low Pressure Magnetron Reactive Ion Etching of GaN and AlxGa1-xN Using Dichlorofluoromethane (Halocarbon 12)
Authors: Batoni, P., Patel, K., Burkhart, C. C.
Source: Journal of Electronic Materials; September 2007, Vol. 36 Issue 9, p1166-1173, 8p
Database: Applied Science & Technology Source
Description
ISSN:03615235
DOI:10.1007/s11664-007-0199-0