APA (7th ed.) Citation

Batoni, P., Patel, K., & Burkhart, C. C. (2007). Very Low Pressure Magnetron Reactive Ion Etching of GaN and AlxGa1-xN Using Dichlorofluoromethane (Halocarbon 12). Journal of Electronic Materials, 36(9), 1166. https://doi.org/10.1007/s11664-007-0199-0

Chicago Style (17th ed.) Citation

Batoni, P., K. Patel, and C. C. Burkhart. "Very Low Pressure Magnetron Reactive Ion Etching of GaN and AlxGa1-xN Using Dichlorofluoromethane (Halocarbon 12)." Journal of Electronic Materials 36, no. 9 (2007): 1166. https://doi.org/10.1007/s11664-007-0199-0.

MLA (9th ed.) Citation

Batoni, P., et al. "Very Low Pressure Magnetron Reactive Ion Etching of GaN and AlxGa1-xN Using Dichlorofluoromethane (Halocarbon 12)." Journal of Electronic Materials, vol. 36, no. 9, 2007, p. 1166, https://doi.org/10.1007/s11664-007-0199-0.