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Very Low Pressure Magnetron Reactive Ion Etching of GaN and AlxGa1-xN Using Dichlorofluoromethane (Halocarbon 12)

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Title: Very Low Pressure Magnetron Reactive Ion Etching of GaN and AlxGa1-xN Using Dichlorofluoromethane (Halocarbon 12)
Authors: Batoni, P., Patel, K., Burkhart, C. C.
Source: Journal of Electronic Materials; September 2007, Vol. 36 Issue 9, p1166-1173, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501473517
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Very Low Pressure Magnetron Reactive Ion Etching of GaN and AlxGa1-xN Using Dichlorofluoromethane (Halocarbon 12)
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  Data: <searchLink fieldCode="AU" term="%22Batoni%2C+P%2E%22">Batoni, P.</searchLink><br /><searchLink fieldCode="AU" term="%22Patel%2C+K%2E%22">Patel, K.</searchLink><br /><searchLink fieldCode="AU" term="%22Burkhart%2C+C%2E+C%2E%22">Burkhart, C. C.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; September 2007, Vol. 36 Issue 9, p1166-1173, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501473517
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-007-0199-0
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 8
        StartPage: 1166
    Titles:
      – TitleFull: Very Low Pressure Magnetron Reactive Ion Etching of GaN and AlxGa1-xN Using Dichlorofluoromethane (Halocarbon 12)
        Type: main
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            NameFull: Batoni, P.
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            NameFull: Patel, K.
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            NameFull: Burkhart, C. C.
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            – D: 01
              M: 09
              Text: September 2007
              Type: published
              Y: 2007
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              Value: 03615235
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              Value: 36
            – Type: issue
              Value: 9
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            – TitleFull: Journal of Electronic Materials
              Type: main
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