View in EDS

Gate-Recess Technology for InAs/AlSb HEMTs.

Saved in:
Bibliographic Details
Title: Gate-Recess Technology for InAs/AlSb HEMTs.
Authors: Lefebvre, Eric, Malmkvist, Mikael, Borg, Malin
Source: IEEE Transactions on Electron Devices; September 2009, Vol. 56 Issue 9, p1904-1911, 8p
Database: Applied Science & Technology Source
Description
ISSN:00189383
DOI:10.1109/TED.2009.2026123