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Ultrathin n+/p junction in preamorphized silicon by phosphorus and carbon coimplantation engineering: Influence of C location.

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Bibliographic Details
Title: Ultrathin n+/p junction in preamorphized silicon by phosphorus and carbon coimplantation engineering: Influence of C location.
Authors: Cagnat, N., Mathiot, D., Laviron, C.
Source: Journal of Applied Physics; November 15 2007, Vol. 102 Issue 10, p106102-106102, 1p
Database: Applied Science & Technology Source
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