Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy.
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| Title: | Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy. |
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| Authors: | Beechem, Thomas, Christensen, Adam, Green, D. S. |
| Source: | Journal of Applied Physics; December 1 2009, Vol. 106 Issue 11, p114509-1-114509-9, 9p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.3267157 |
