APA (7th ed.) Citation

Beechem, T., Christensen, A., & Green, D. S. (2009). Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy. Journal of Applied Physics, 106(11), 114509-1. https://doi.org/10.1063/1.3267157

Chicago Style (17th ed.) Citation

Beechem, Thomas, Adam Christensen, and D. S. Green. "Assessment of Stress Contributions in GaN High Electron Mobility Transistors of Differing Substrates Using Raman Spectroscopy." Journal of Applied Physics 106, no. 11 (2009): 114509-1. https://doi.org/10.1063/1.3267157.

MLA (9th ed.) Citation

Beechem, Thomas, et al. "Assessment of Stress Contributions in GaN High Electron Mobility Transistors of Differing Substrates Using Raman Spectroscopy." Journal of Applied Physics, vol. 106, no. 11, 2009, pp. 114509-1, https://doi.org/10.1063/1.3267157.