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Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy.

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Title: Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy.
Authors: Beechem, Thomas, Christensen, Adam, Green, D. S.
Source: Journal of Applied Physics; December 1 2009, Vol. 106 Issue 11, p114509-1-114509-9, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501530690
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy.
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  Data: <searchLink fieldCode="AU" term="%22Beechem%2C+Thomas%22">Beechem, Thomas</searchLink><br /><searchLink fieldCode="AU" term="%22Christensen%2C+Adam%22">Christensen, Adam</searchLink><br /><searchLink fieldCode="AU" term="%22Green%2C+D%2E+S%2E%22">Green, D. S.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; December 1 2009, Vol. 106 Issue 11, p114509-1-114509-9, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501530690
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      – Type: doi
        Value: 10.1063/1.3267157
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 114509-1
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      – TitleFull: Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy.
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            NameFull: Beechem, Thomas
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            NameFull: Christensen, Adam
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            NameFull: Green, D. S.
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            – D: 01
              M: 12
              Text: December 1 2009
              Type: published
              Y: 2009
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              Value: 106
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