Hole Mobility in Ultrathin Double-Gate SOI Devices: The Effect of Acoustic Phonon Confinement.

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Bibliographic Details
Title: Hole Mobility in Ultrathin Double-Gate SOI Devices: The Effect of Acoustic Phonon Confinement.
Authors: Donetti, Luca, Gamiz, Francisco, Rodriguez, Noel
Source: IEEE Electron Device Letters; December 2009, Vol. 30 Issue 12, p1338-1340, 3p
Database: Applied Science & Technology Source
Description
ISSN:07413106
DOI:10.1109/LED.2009.2032568