Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization.
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| Title: | Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization. |
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| Authors: | Yang, Y. C., Pan, F., Zeng, F. |
| Source: | Journal of Applied Physics; December 15 2009, Vol. 106 Issue 12, p123705-1-123705-5, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.3273329 |
