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Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization.

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Title: Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization.
Authors: Yang, Y. C., Pan, F., Zeng, F.
Source: Journal of Applied Physics; December 15 2009, Vol. 106 Issue 12, p123705-1-123705-5, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501539959
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; December 15 2009, Vol. 106 Issue 12, p123705-1-123705-5, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501539959
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.3273329
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 123705-1
    Titles:
      – TitleFull: Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization.
        Type: main
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          Name:
            NameFull: Yang, Y. C.
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            NameFull: Pan, F.
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            NameFull: Zeng, F.
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            – D: 15
              M: 12
              Text: December 15 2009
              Type: published
              Y: 2009
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              Value: 106
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              Value: 12
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            – TitleFull: Journal of Applied Physics
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